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FGA15N120ANTD 1200V NPT Trench IGBT
May 2006
FGA15N120ANTD
1200V NPT Trench IGBT
Features
* NPT Trench Technology, Positive temperature coefficient * Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25C * Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A and TC = 25C * Extremely enhanced avalanche capability
tm
Description
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
C
G
GCE
TO-3P
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current
(Note 1)
Description
Collector-Emitter Voltage @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
FGA15N120ANTD
1200 20 30 15 45 15 45 186 74 -55 to +150 -55 to +150 300
Units
V V A A A A A W W C C C
Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC RJC RJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
0.67 2.88 40
Units
C/W C/W C/W
Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature
(c)2006 Fairchild Semiconductor Corporation
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FGA15N120ANTD Rev. A
FGA15N120ANTD 1200V NPT Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA15N120ANTD
Device
FGA15N120ANTD
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics ICES IGES Collector Cut-Off Current G-E Leakage Current
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
---
---
3 250
mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125C IC = 30A, Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2650 143 96 ---pF pF pF VGE = 15V 4.5 ---6.5 1.9 2.2 2.3 8.5 2.4 --V V V V
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 600 V, IC = 15A, VGE = 15V VCC = 600 V, IC = 15A, RG = 10, VGE = 15V, Inductive Load, TC = 125C VCC = 600 V, IC = 15A, RG = 10, VGE = 15V, Inductive Load, TC = 25C -----------------15 20 160 100 3 0.6 3.6 15 20 170 150 3.2 0.8 4.0 120 16 50 ---180 4.5 0.9 5.4 ----4.8 1.2 6.0 180 22 65 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGA15N120ANTD Rev. A
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FGA15N120ANTD 1200V NPT Trench IGBT
Electrical Characteristics of DIODE T
Symbol
VFM trr Irr Qrr
C
= 25C unless otherwise noted
Parameter
Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 15A
Test Conditions
TC = 25C TC = 125C IF = 15A dI/dt = 200 A/s TC = 25C TC = 125C TC = 25C TC = 125C TC = 25C TC = 125C
Min.
---------
Typ.
1.7 1.8 210 280 27 31 2835 4340
Max.
2.7 -330 -40 -6600 --
Units
V ns A nC
FGA15N120ANTD Rev. A
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FGA15N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200 T C = 25 C
o
Figure 2. Typical Saturation Voltage Characteristics
150 Common Emitter VGE = 15V
o
20V 17V
15V
Collector Current, IC [A]
12V
Collector Current , IC [A]
150
120
TC = 25 C TC = 125 C
o
100
V GE = 10V
90
60
50
30
0 0 2 4 6 8 10
0 0 2 4 6
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level
3.0 Common Emitter V GE = 15V IC = 24A 2.5
Figure 4. Saturation Voltage vs. VGE
Common Emitter o T C = 25 C
16
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
12
IC = 15A
8
2.0
4 24A I C = 7.5A 0 4 8
15A
1.5 25 50 75 100
o
0
125
150
12
16
20
Case Temperature, TC [ C]
Gate-Emitter Voltage, V GE [V]
Figure 5. Saturation Voltage vs. VGE
16 Common Emitter o TC = 125 C
Figure 6. Capacitance Characteristics
3500 3000 2500 Ciss
Collector-Emitter Voltage, VCE [V]
Capacitance [pF]
12
2000 1500 1000 500 0 Coss Common Emitter VGE = 0V, f = 1MHz T C = 25 C
o
8
4
24A
15A
Crss
0 0 4
IC = 7.5A 8 12 16 20
0.1
1
10
Gate-Emitter Voltage, V GE [V]
Collector-Emitter Voltage, VCE[V]
FGA15N120ANTD Rev. A
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FGA15N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics
Figure 7. Turn-On Characteristics vs. Gate Resistance
100
(Continued)
Figure 8. Turn-Off Characteristics vs. Gate Resistance
1000 Common Emitter V CC = 600V, V GE = 15V IC = 15A T C = 25 C
o
td(off)
tr
Switching Time [ns]
10
td(on)
Switching Time [ns]
T C = 125 C
o
100
tf
Common Emitter V CC = 600V, V GE = 15V IC = 15A T C = 25 C 1 0 10 20 30 40 T C = 125 C 50 60 70
o o
10 0 10 20 30 40 50 60 70
Gate Resistance, RG[]
Gate Resistance, R G []
Figure 9. Switching Loss vs. Gate Resistance
Figure 10. Turn-On Characteristics vs. Collector Current
Common Emitter V GE = 15V, R G = 10 100 T C = 25 C T C = 125 C tr
o o
Common Emitter V CC = 600V, V GE = 15V IC = 15A 10 T C = 25 C T C = 125 C Eon
o
Switching Loss [mJ]
Switching Time [ns]
o
td(on) 10
Eoff 1
0
10
20
30
40
50
60
70
10
15
20
25
30
Gate Resistance, R G []
Collector Current, IC [A]
Figure 11. Turn-Off Characteristics vs. Collector Current
Common Emitter V GE = 15V, R G = 10 T C = 25 C T C = 125 C
o o
Figure 12. Switching Loss vs. Collector Current
Common Emitter VGE = 15V, RG = 10 10 T C = 25 C T C = 125 C
o o
td(off)
Eon
100
Switching Loss [mJ]
Switching Time [ns]
Eoff 1
tf
10 10 15 20 25 30
0.1 5 10 15 20 25 30
Collector Current, IC [A]
Collector Current, IC [A]
FGA15N120ANTD Rev. A
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FGA15N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics
Figure 13. Gate Charge Characteristics
15 Common Emitter RL = 40 T C = 25 C 600V 9 400V
o
(Continued)
Figure 14. SOA Characteristics
10 0
Gate-Emitter Voltage, VGE [V]
12
Ic M A X (P u lse d) 5 0 s Ic M A X (C o n tinu o us ) 1 00 s 1m s
Collector Current, Ic [A]
10 D C O p e ra tio n 1
6
Vcc = 200V
3
0.1
0 0 20 40 60 80 100 120
0 .0 1 0.1
S in g le N on re p etitive o P u lse T c = 25 C C urves m u st b e de rate d lin ea rly w ith incre ase in te m pe ratu re 1 10 10 0 10 00
Gate Charge, Qg [nC]
C o lle c to r - E m itte r V o lta g e , V C E [V ]
Figure 15. Turn-Off SOA
100
Collector Current, IC [A]
10
1 10
Safe Operating Area o V GE = 15V, T C = 125 C
100 1000
Collector-Emitter Voltage, VCE [V]
Figure 16. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
1
10
Rectangular Pulse Duration [sec]
FGA15N120ANTD Rev. A
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FGA15N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics
Figure 17. Forward Characteristics
50
(Continued)
Figure 18. Reverse Recovery Current
30 di/dt = 200A/s
Forward Current , IF [A]
10
Reverse Recovery Currnet , Irr [A]
25
20
TJ = 125 C TJ = 25 C
o
o
15
di/dt = 100A/s
1
10
TC = 125 C TC = 25 C 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4
o
o
5
0 5 10 15 20 25
Forward Voltage , VF [V]
Forward Current , IF [A]
Figure 19. Stored Charge
7000
Figure 20. Reverse Recovery Time
400
Stored Recovery Charge , Qrr [nC]
Reverse Recovery Time , trr [ns]
6000 5000 4000 3000 2000 1000 0 5 10 15 20 25 di/dt = 200A/s
300
di/dt = 100A/s
di/dt = 100A/s
200 di/dt = 200A/s 100
0 5 10 15 20 25
Forward Current , IF [A]
Forward Current , IF [A]
FGA15N120ANTD Rev. A
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FGA15N120ANTD 1200V NPT Trench IGBT
Mechanical Dimensions
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
FGA15N120ANTD Rev. A
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FGA15N120ANTD 1200V NPT Trench IGBT
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support device 1. Life support devices or systems are devices or systems which, or system whose failure to perform can be reasonably expected (a) are intended for surgical implant into the body, or (b) support to cause the failure of the life support device or system, or to or sustain life, or (c) whose failure to perform when properly used affect its safety or effectiveness. in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I19
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
9 FGA15N120ANTD Rev. A
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